DF451
1000
I
F
Q
S
=
∫
50µs
0
Conditions:
T
j
= 125˚C,
V
R
= 100V
Q
S
t
p
= 1ms
dI
R
/dt
100
I
RR
I
F
= 2000A
I
F
= 1000A
I
F
= 500A
I
F
= 200A
I
F
= 100A
Reverse recovered charge Q
S
- (µC)
10
1
1
10
100
Rate of rise of reverse current, dI
R
/dt - (A/µs)
1000
Fig.3 Recovered charge
1000
Conditions:
T
j
= 125˚C,
V
R
= 100V
I
F
= 2000A
Reverse recovery current, I
RR
- (A)
I
F
= 1000A
100
I
F
= 500A
IF = 100A
10
1
1
10
100
Rate of rise of reverse current, dI
R
/dt - (A/µs)
1000
Fig.4 Typical reverse recovery current vs rate of rise of forward current
5/8