DF685
SURGE RATINGS
Symbol
I
FSM
It
I
FSM
It
I
FSM
It
2
2
2
Parameter
Surge (non-repetitive) forward current
Conditions
Max.
4.5
Units
kA
A
2
s
kA
A
2
s
kA
A
2
s
10ms half sine; with 0% V
RRM,
T
j
= 150 C
I t for fusing
Surge (non-repetitive) forward current
10ms half sine; with 50% V
RRM,
T
j
= 150 C
I t for fusing
Surge (non-repetitive) forward current
10ms half sine; with 100% V
RRM,
T
j
= 150 C
I t for fusing
2
o
2
o
2
o
101.25x10
3
3.6
64.8x10
3
-
-
THERMAL AND MECHANICAL DATA
Symbol
Parameter
Conditions
Double side cooled
R
th(j-c)
Thermal resistance - junction to case
Single side cooled
Cathode dc
Clamping force 10kN
with mounting compound
On-state (conducting)
Double side
Single side
-
-
-
-
-55
9.0
0.095
0.01
0.02
150
150
11.0
o
Min.
dc
Anode dc
-
-
Max.
0.045
0.086
Units
o
C/W
o
C/W
C/W
C/W
C/W
o
o
R
th(c-h)
Thermal resistance - case to heatsink
o
T
vj
T
stg
-
Virtual junction temperature
Storage temperature range
Clamping force
C
C
o
kN
CHARACTERISTICS
Symbol
V
FM
I
RRM
t
rr
Q
RA1
I
RM
K
V
TO
r
T
V
FRM
2/8
Forward voltage
Peak reverse current
Reverse recovery time
Recovered charge (50% chord)
Reverse recovery current
Soft factor
Threshold voltage
Slope resistance
Forward recovery voltage
At T
vj
= 150
o
C
At T
vj
= 150
o
C
di/dt = 1000A/µs, T
j
= 125
o
C
I
F
= 1000A, di
RR
/dt = 100A/µs
T
case
= 150
o
C, V
R
= 100V
Parameter
Conditions
At 1500A peak, T
case
= 25
o
C
At V
RRM
, T
case
= 150
o
C
Typ.
-
-
5
-
270
1.8
-
-
-
Max.
4.8
80
-
650
-
-
2.0
1.76
220
Units
V
mA
µs
µC
A
-
V
mΩ
V
DYNEX [ Dynex Semiconductor ]
