DGT409BCA
30
28
26
24
22
20
18
3.0
2.8
2.6
2.4
2.2
0.1
dc
tgf
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.01
16
14
12
10
8
0.001
0.0001
tgs
6
Conditions:
Tj = 115˚C, CS = 2µF,
RS = 10Ω, IT = 800A,
4
2
VDM = 3000V
0
0
10 20
30
40
50
60
70
80
10
100
0.001
0.01
0.1
Time - (s)
1
Rate of rise of reverse gate current, dIGQ/dt - (A/µs)
Fig.17 Gate storage time and fall time vs rate of rise of
reverse gate current
Fig.18 Maximum (limit) transient thermal impedance -
double side cooled
9/11