DIM200PHM33-F000
DIM200PHM33-F000
Half Bridge IGBT Module
Replaces June 2003 version, issue PDS5606-2.1
PDS5606-3.1 April 2004
FEATURES
I
I
I
I
KEY PARAMETERS
V
CES
V
CE(sat)
*
I
C
I
C(PK)
(typ)
(max)
(max)
3300V
2.8V
200A
400A
Soft Punch Through Silicon
10µs Short Circuit Withstand
Isolated MMC Base with AlN Substrates
High Thermal Cycling Capability
* Measured at auxiliary terminals.
APPLICATIONS
I
I
I
1(E1/C2)
2(C1)
5(E
1)
4(G
1)
3(E2)
7(E
2)
6(G
2)
High Reliability Inverters
Motor Controllers
Traction Auxiliaries
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 3600A.
The DIM200PHM33-F000 is a half bridge 3300V soft punch
through, n channel enhancement mode, insulated gate bipolar
transistor (IGBT) module. The IGBT has a wide reverse bias safe
operating area (RBSOA) plus full 10µs short circuit withstand.
This device is optimised for traction drives and other applications
requiring high thermal cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
8(C
1)
Fig. 1 Half bridge circuit diagram
ORDERING INFORMATION
Order As:
DIM200PHM33-F000
Note: When ordering, please use the whole part number.
Outline type code:
P
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/9
www.dynexsemi.com
DYNEX [ Dynex Semiconductor ]
