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DIM200PKM33-A000 参数 Datasheet PDF下载

DIM200PKM33-A000图片预览
型号: DIM200PKM33-A000
PDF下载: 下载PDF文件 查看货源
内容描述: IGBT斩波模块 [IGBT Chopper Module]
分类和应用: 双极性晶体管
文件页数/大小: 6 页 / 131 K
品牌: DYNEX [ Dynex Semiconductor ]
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DIM200PKM33-A000
DIM200PKM33-A000
IGBT Chopper Module
Preliminary Information
DS5598-1.1 April 2003
FEATURES
I
I
I
I
KEY PARAMETERS
V
CES
V
CE(sat)
*
I
C
I
C(PK)
(typ)
(max)
(max)
3300V
3.2V
200A
400A
10µs Short Circuit Withstand
High Thermal Cycling Capability
Non Punch Through Silicon
Isolated MMC Base with AlN Substrates
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
I
I
Choppers
Traction Auxiliaries
1(E1/K)
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 2400A.
The DIM200PKM33-A000 is a 3300V, n channel
enhancement mode insulated gate bipolar transistor (IGBT)
chopper module configured with the upper arm of the bridge
controlled. The IGBT has a wide reverse bias safe operating
area (RBSOA) plus full 10µs short circuit withstand. This device
is optimised for applications requiring high thermal cycling
capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
2(C1)
5(E
1)
4(G
1)
8(C
1)
3(A)
Fig. 1 Chopper circuit diagram - upper arm control
ORDERING INFORMATION
Order As:
DIM200PKM33-A000
Note: When ordering, please use the whole part number.
Outline type code:
P
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/6
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