DIM300XCM45-F000
600
550
500
450
600
25ºC
125ºC
700
Tcase = 125° C
Vge = +/-15V
Rg(off) =22ohms
350
300
250
200
150
100
50
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Collector current, I
c
(A)
400
Forward current, I
F
(A)
500
Module
400
Chip
300
200
100
Forward voltage, V
F
(V)
0
4000
4200
4400
4600
4800
5000
Collector emitter voltage, V
ce
(V)
Fig. 7 Diode typical forward characteristics
100
500
450
Tj = 125 ºC
Fig. 8 Reverse bias safe operating area
Transient thermal impedance, Zthj-c (°
C/kW)
Rth IGBT
Rth Diode
Reverse recoery current, I
rr
-(A)
400
350
300
250
200
150
100
50
0
0
1000
2000
3000
4000
5000
10
R
IGBT
Diode
Á
R
Á
1.29
0.14
0.645
0.14
4.5
4.12
2.25
4.12
5.21
23.41
2.605
23.41
12.93
146.3
6.465
146.3
Reverse voltage, V
R
-(V)
1
0.001
0.01
0.1
1
10
Time, (s)
Fig. 9 Diode reverse bias safe operating area
Fig. 10 Transient thermal impedance
6
/
7
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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