DIM375WHS06-S000
DIM375WHS06-S000
Half Bridge IGBT Module
Replaces version December 2003, issue DS5675-2.2
DS5675-3.3 February 2004
FEATURES
I
I
KEY PARAMETERS
V
CES
V
CE(sat)
* (typ)
I
C
I
C(PK)
(max)
(max)
600V
2.1V
375A
750A
Low Forward Voltage Drop
Isolated Copper Baseplate
APPLICATIONS
I
I
Inverters
Motor Controllers
*(measured at the power busbars and not the auxiliary terminals)
The Powerline range of modules includes half bridge,
chopper, bi-directional, dual and single switch configurations
covering voltages from 600V to 3300V and currents up to 3600A.
The DIM375WHS06-S000 is a half bridge 600V n channel
enhancement mode insulated gate bipolar transistor (IGBT)
module. The module is suitable for a variety of medium voltage
applications in motor drives and power conversion.
The IGBT has a wide reverse bias safe operating area
(RBSOA) for ultimate reliability in demanding applications.
These modules incorporate electrically isolated base plates
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
Typical applications include dc motor drives, ac pwm
drivesand ups systems.
.
7(E
2
)
6(G
2
)
1(E1C2)
2(E2)
3(C1)
4(G
1
)
5(E
1
)
Fig. 1 Half bridge circuit diagram
ORDERING INFORMATION
Order as:
DIM375WHS06-S000
Note: When ordering, use complete part number.
Outline type code:
W
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/8
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