DIM600BSS12-E000 参数 Datasheet PDF下载

DIM600BSS12-E000

DIM600BSS12-E000

Single Switch IGBT Module

Replaces issue September 2003, version PDS5651-2.0

PDS5702-1.2 January 2004

FEATURES

I

I

I

I

Trench Gate Field Stop Technology

Low Conduction Losses

Low Switching Losses

10µs Short Circuit Withstand

KEY PARAMETERS

V

CES

(typ)

V

CE(sat)

(max)

I

C

(max)

I

C(PK)

1200V

1.7V

600A

1200A

APPLICATIONS

I

I

I

Motor Drives

Wind Turbines

UPS Systems

2(E)

5(E )

1

1(C)

4(C

1

)

The Powerline range of high power modules includes half

bridge, chopper, dual, single and bi-directional switch

configurations covering voltages from 600V to 3300V and

currents up to 3600A.

The DIM600BSS12-E000 is a single switch 1200V, n channel

enhancement mode, insulated gate bipolar transistor (IGBT)

module. The IGBT has a wide reverse bias safe operating area

(RBSOA) plus full 10µs short circuit withstand.

The module incorporates an electrically isolated base plate

and low inductance construction enabling circuit designers to

optimise circuit layouts and utilise grounded heat sinks for safety.

3(G

1

)

Fig. 1 Single switch circuit diagram

ORDERING INFORMATION

Order As:

DIM600BSS12-E000

Note: When ordering, please use the complete part number.

Outline type code:

B

(See package details for further information)

Fig. 2 Module Outline

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

1/9

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