DIM800DDM12-A000
DIM800DDM12-A000
Dual Switch IGBT Module
Preliminary Information
DS5528-1.1 March 2002
FEATURES
s
s
s
s
10µs Short Circuit Withstand
High Thermal Cycling Capability
Non Punch Through Silicon
Isolated MMC Base with AlN Substrates
KEY PARAMETERS
V
CES
(typ)
V
CE(sat)
*
(max)
I
C
(max)
I
C(PK)
1200V
2.2V
800A
1600A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
s
s
s
Inverters
Motor Controllers
Traction Drives
5(E
1
)
1(E1)
2(C2)
12(C
2
)
6(G
1
)
11(G
2
)
The Powerline range of modules includes half bridge, dual
and single switch configurations covering voltages from 600V to
3300V and currents up to 2400A.
The DIM800DDM12-A000 is a dual switch 1200V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10µs short circuit withstand. This module is
optimised applications requiring high thermal cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
7(C
1
)
3(C1)
10(E
2
)
4(E2)
Fig. 1 Dual switch circuit diagram
5
6
3
1
ORDERING INFORMATION
Order As:
DIM800DDM12-A000
Note: When ordering, please use the whole part number.
7
8
9
12
11
10
4
2
Outline type code:
D
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/10
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