DIM800DDM17-A000
100
1400
Transient thermal impedance, Z
th (j-c)
- (°C/kW )
Diode
1200
Transistor
DC collector current, I
C
- (A)
10
1000
800
10
600
400
IGBT
Diode
1
0.001
1
R
i
(˚C/KW) 0.4391
τ
i
(ms)
0.045
R
i
(˚C/KW) 1.5612
τ
i
(ms)
0.0063516
0.01
2
3
4
3.1937 4.1465 10.2356
2.8869 21.7141 152.6381
5.7426 6.999 25.6068
1.4746 13.9664 111.7517
1
200
0.1
Pulse width, t
p
- (s)
0
0
20
40
60
80
100
120
Case temperature, T
case
- (˚C)
140
160
Fig. 11 Transient thermal impedance
Fig. 12 DC current rating vs case temperature
8/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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