DK13..FW
DYNAMIC CHARACTERISTICS
Symbol
VTM
Parameter
Maximum on-state voltage
Conditions
At 300A peak, Tcase = 25oC
At VRRM/VDRM, Tcase = 125oC
Min.
Max. Units
-
-
-
-
-
-
-
-
2.35
15
V
IRRM/IDRM
dV/dt
Peak reverse and off-state current
mA
V/µs
A/µs
A/µs
V
Maximum linear rate of rise of off-state voltage Linear to 60% VDRM T = 125oC, Gate open circuit
200
500
800
1.65
3.5
3
j
Repetitive 50Hz
Gate source 20V, 20Ω
dI/dt
Rate of rise of on-state current
tr < 0.5µs, Tj = 125˚C
At Tvj = 125oC
Non-repetitive
VT(TO)
rT
Threshold voltage
On-state slope resistance
Delay time
At Tvj = 125oC
mΩ
µs
Tj = 25˚C, IT = 50A,
tgd
VD = 300V, IG = 1A,
Total turn-on time
Holding current
dI/dt =50A/µs, dIG/dt = 1A/µs
-
60*
-
1.5
-
µs
mA
µs
t(ON)TOT
IH
Tj = 25oC, ITM = 1A, VD = 12V
Tj = 125˚C, IT = 100A, VR = 50V,
dV/dt = 200V/µs (Linear to 60% VDRM),
dIR/dt = 30A/µs, Gate open circuit
tq code: W
10
tq
Turn-off time
*Typical value.
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
VGT
Parameter
Gate trigger voltage
Conditions
Typ.
Max. Units
VDRM = 12V, Tcase = 25oC, RL = 6Ω
VDRM = 12V, Tcase = 25oC, RL = 6Ω
At VDRM Tcase = 125oC, RL = 1kΩ
-
-
-
-
-
-
-
3.0
200
0.2
5.0
4
V
mA
V
IGT
Gate trigger current
VGD
Gate non-trigger voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
VRGM
IFGM
V
Anode positive with respect to cathode
A
PGM
16
W
W
PG(AV)
Mean gate power
3.0
3/13
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