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DK1310FXM 参数 Datasheet PDF下载

DK1310FXM图片预览
型号: DK1310FXM
PDF下载: 下载PDF文件 查看货源
内容描述: 快速开关晶闸管 [Fast Switching Thyristor]
分类和应用: 栅极触发装置可控硅整流器开关
文件页数/大小: 13 页 / 309 K
品牌: DYNEX [ Dynex Semiconductor ]
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DK13..FX
DYNAMIC CHARACTERISTICS
Symbol
V
TM
I
RRM
/I
DRM
dV/dt
Parameter
Maximum on-state voltage
Peak reverse and off-state current
Maximum linear rate of rise of off-state voltage
Conditions
At 300A peak, T
case
= 25
o
C
At V
RRM
/V
DRM
, T
case
= 125
o
C
Linear to 60% V
DRM
T
j
= 125
o
C, Gate open circuit
Gate source 20V, 20Ω
dI/dt
Rate of rise of on-state current
t
r
< 0.5µs, T
j
= 125˚C
V
T(TO)
r
T
t
gd
t
(ON)TOT
I
H
Threshold voltage
On-state slope resistance
Delay time
Total turn-on time
Holding current
At T
vj
= 125
o
C
At T
vj
= 125
o
C
T
j
= 25˚C, I
T
= 50A,
V
D
= 300V, I
G
= 1A,
dI/dt =50A/µs, dI
G
/dt = 1A/µs
T
j
= 25
o
C, I
TM
= 1A, V
D
= 12V
T
j
= 125˚C, I
T
= 100A, V
R
= 50V,
t
q
code: X
dV/dt = 200V/µs (Linear to 60% V
DRM
),
dI
R
/dt = 30A/µs, Gate open circuit
Non-repetitive
-
-
-
-
-
60*
-
800
1.5
2.83
5
3
-
15
A/µs
V
mΩ
µs
µs
mA
µs
Repetitive 50Hz
Min.
-
-
-
-
Max.
2.35
15
200
500
Units
V
mA
V/µs
A/µs
t
q
Turn-off time
*Typical value.
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
V
GT
I
GT
V
GD
V
RGM
I
FGM
P
GM
P
G(AV)
Parameter
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Anode positive with respect to cathode
Conditions
V
DRM
= 12V, T
case
= 25
o
C, R
L
= 6Ω
V
DRM
= 12V, T
case
= 25
o
C, R
L
= 6Ω
At V
DRM
T
case
= 125
o
C, R
L
= 1kΩ
Typ.
-
-
-
-
-
-
-
Max.
3.0
200
0.2
5.0
4
16
3.0
Units
V
mA
V
V
A
W
W
3/13
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