DS1107SG
10000
Conditions:
T
j
= 150˚C
V
R
= 100V
I
F
= 1000A
1000
Conditions:
T
j
= 150˚C
V
R
= 100V
I
F
= 1000A
Reverse recovery current, I
rr
- (A)
I
F
Q
S
Stored charge, Q
S
- (µC)
1000
100
dI
F
/dt
100
0.1
I
RM
1.0
10
100
10
0.1
1.0
10
100
Rate of decay of on-state current, dI
F
/dt - (A/µs)
Rate of decay of forward current, dI
F
/dt - (A/µs)
Fig.4 Total stored charge
Fig.5 Maximum reverse recovery current
30
I
2
t
=
Î
2
xt
750
Thermal Impedance - junction to case, R
th(j–c)
- (˚C/W)
0.1
Anode side cooled
2
25
Peak half sine forward current - (kA)
700
Double side cooled
20
650
I
2
t value - (A
2
s x 10
3
)
15
600
0.01
10
I
2
t
550
Conduction
5
500
Effective thermal resistance
Junction to case ˚C/W
Double side
0.032
0.034
0.044
0.057
Single side
0.064
0.066
0.076
0.089
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
0
1
ms
10
1
2 3
5
10
20
450
50
0.001
0.001
0.01
Cycles at 50Hz
Duration
0.1
Time - (s)
1.0
10
Fig.6 Surge (non-repetitive) forward current vs time (with
50% V
RRM
at T
case
150˚C)
Fig.7 Maximum (limit) transient thermal impedance -
junction to case
5/7
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