DS2007SF
10000
1000
Conditions:
T
j
= 150˚C
V
R
= 100V
I
F
= 2000A
Conditions:
T
j
= 150˚C
V
R
= 100V
I
F
= 2000A
Reverse recovery current I
rr
- (A)
I
F
Q
S
dI
F
/dt
I
RM
Stored charge, Q
S
- (µC)
1000
100
100
0.1
1.0
10
100
10
0.1
1.0
10
100
Rate of decay of on-state current, dI
F
/dt - (A/µs)
Rate of decay of forward current, dI
F
/dt - (A/µs)
Fig.4 Total stored charge
40
^
I
2
t = I
2
x t
2
2.0
Fig.5 Maximum reverse recovery current
0.1
Thermal Impedance - junction to case - (˚C/W)
Anode side cooled
Peak half sine forward current - (kA)
30
I
2
t value - (A
2
s x 10
6
)
Double side cooled
0.01
20
I
2
t
1.5
10
Conduction
Effective thermal resistance
Junction to case ˚C/W
Double side
0.022
0.024
0.026
0.027
Single side
0.038
0.040
0.042
0.043
0
1
ms
10
1
2 3
5
10
20
1.0
50
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
Cycles at 50Hz
Duration
0.001
0.001
0.01
0.1
Time - (s)
1.0
10
Fig.6 Surge (non-repetitive) forward current vs time
(with 50% V
RRM
at T
case
150˚C)
Fig.7 Maximum (limit) transient thermal impedance -
junction to case
5/7
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