DS2106SY
100000
10000
1000
1000
100
10
I
Conditions:
Tj = 150˚C
Conditions:
Tj = 150˚C
F
V
R = 100V
VR = 100V
Q
S
IF = 2000A
IF = 2000A
dI /dt
F
I
RM
0.1
1.0
10
100
0.1
1.0
10
100
Rate of decay of forward current, dIF/dt - (A/µs)
Rate of decay of forward current, dIF/dt - (A/µs)
Fig.4 Total stored charge
Fig.5 Maximum reverse recovery current
120
100
80
60
40
20
0
0.1
I2t = Î2 x t
2
Anode side cooled
12
10
0.01
Double side cooled
I2t
8
6
4
0.001
Effective thermal resistance
Junction to case ˚C/W
Conduction
Double side
0.0095
Single side
0.019
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
0.0105
0.020
0.0112
0.0139
0.0207
0.0234
0.0001
1
10
1
2
3
5
10 20
50
0.001
0.01
0.1
Time - (s)
1
10
100
ms
Cycles at 50Hz
Duration
Fig.6 Surge (non-repetitive) forward current vs time
(with 50% VRRM at Tcase 150˚C)
Fig.7 Maximum (limit) transient thermal impedance -
junction to case
5/7
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