DS402ST
SURGE RATINGS
Symbol
I
FSM
I
2
t
I
FSM
I
2
t
Parameter
Surge (non-repetitive) forward current
I
2
t for fusing
Surge (non-repetitive) forward current
I
2
t for fusing
Conditions
10ms half sine; T
case
= 175
o
C
V
R
= 50% V
RRM
- 1/4 sine
10ms half sine; T
case
= 175
o
C
V
R
= 0
Max.
4.5
101 x 10
3
5.6
155 x 10
3
Units
kA
A
2
s
kA
A
2
s
THERMAL AND MECHANICAL DATA
Symbol
Parameter
Conditions
Double side cooled
R
th(j-c)
Thermal resistance - junction to case
Single side cooled
Cathode dc
Clamping force 4.5kN
with mounting compound
On-state (conducting)
T
vj
Virtual junction temperature
Reverse (blocking)
T
stg
-
Storage temperature range
Clamping force
-
-55
3.5
175
200
5.0
o
Min.
dc
Anode dc
-
-
-
-
-
-
Max.
0.08
0.16
0.16
0.02
0.04
185
Units
o
C/W
o
C/W
C/W
C/W
C/W
o
o
Double side
Single side
o
R
th(c-h)
Thermal resistance - case to heatsink
o
C
C
C
o
kN
CHARACTERISTICS
Symbol
V
FM
I
RRM
V
TO
r
T
Parameter
Forward voltage
Peak reverse current
Threshold voltage
Slope resistance
Conditions
At 450A peak, T
case
= 25
o
C
At V
RRM
, T
case
= 175
o
C
At T
vj
= 175˚C
At T
vj
= 175˚C
Min.
-
-
-
-
Max.
1.25
15
0.81
0.84
Units
V
mA
V
mΩ
2/7
DYNEX [ Dynex Semiconductor ]
