DS501ST
CURVES
3000
800
700
dc
1/2 wave
3 phase
6 phase
Instantaneous forward current, I
F
- (A)
2500
Mean power dissipation - (W)
600
500
400
300
200
100
0
2000
T
j
= 175ºC
1500
1000
500
T
j
= 25ºC
0
0.7
0.8
0.9
1.0
1.1
1.2
1.3
Instantaneous forward voltage, V
F
- (V)
1.4
0
100
200
300
400
500
600
Mean on-state current, I
T(AV)
- (A)
700
800
Fig.2 Maximum (limit) forward characteristics
Fig.3 Power dissipation curves
450
I
2
t = Î
2
x t
1.0
Peak half sine forward current - (kA)
2
400
Thermal impedance - (˚C/W)
Anode side cooled
0.1
I
2
t value - (A
2
s x 10
3
)
20
350
15
I
2
t
Double side cooled
300
10
250
0.01
Conduction Effective thermal resistance
Junction to case ˚C/W
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
Double side Single side
0.070
0.140
0.080
0.150
0.105
0.175
0.1425
0.2125
1
10
5
200
0
1
ms
10
1
2 3 5
10 20
150
50
0.001
0.001
0.01
0.1
Time - (s)
Cycles at 50Hz
Duration
Fig.5 Maximum (limit) transient thermal impedance -
junction to case - (˚C/W)
Fig.4 Surge (non-repetitive) forward current vs time (with
50% V
RRM
, T
case
= 175˚C)
4/5
www.dynexsemi.com