GP1200FSS18
GP1200FSS18
Single Switch IGBT Module
Replaces February 2000 version, DS5260-2.0
DS5260-3.1 January 2001
FEATURES
s
s
s
s
Non Punch Through Silicon
Isolated Copper Baseplate
Low Inductance Internal Construction
1200A Per Module
KEY PARAMETERS
V
CES
(typ)
V
CE(sat)
(max)
I
C
(max)
I
C(PK)
1800V
3.5V
1200A
2400A
APPLICATIONS
s
s
s
s
External connection
C1
Aux C
C2
High Power Inverters
Motor Controllers
Induction Heating
Resonant Converters
G
The powerline range of high power modules includes dual
and single switch configurations covering voltages from 600V to
3300V and currents up to 4800A.
The GP1200FSS18 is a single switch 1800V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
Aux E
E1
E2
External connection
Fig. 1 Single switch circuit diagram
Aux C
E1
C1
ORDERING INFORMATION
Order As:
GP1200FSS18
Note: When ordering, please use the whole part number.
Aux E
G
E2
C2
Outline type code:
F
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/10
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