GP1600FSM12 参数 Datasheet PDF下载

GP1600FSM12

ELECTRICAL CHARACTERISTICS

T

case

= 25˚C unless stated otherwise.

Symbol

I

CES

Parameter

Collector cut-off current

Conditions

V

GE

= 0V, V

CE

= V

CES

V

GE

= 0V, V

CE

= V

CES

, T

case

= 125˚C

I

GES

V

GE(TH)

V

CE(SAT)

I

F

I

FM

V

F

Gate leakage current

Gate threshold voltage

Collector-emitter saturation voltage

V

GE

=

±20V,

V

CE

= 0V

I

C

= 120mA, V

GE

= V

CE

V

GE

= 15V, I

C

=1600A

V

GE

= 15V, I

C

= 1600A, T

case

= 125˚C

Diode forward current

Diode maximum forward current

Diode forward voltage

DC

t

p

= 1ms

I

F

=1600A

I

F

=1600A, T

case

= 125˚C

C

ies

L

M

Input capacitance

Module inductance

V

CE

= 25V, V

GE

= 0V, f = 1MHz

-

Min.

-

-

-

4.5

-

-

-

-

-

-

-

-

Typ.

-

-

-

-

2.7

3.2

-

-

2.2

2.3

180

15

Max.

2

75

8

6.5

3.5

4.0

1600

3200

2.4

2.5

-

-

Units

mA

mA

µA

V

V

V

A

A

V

V

nF

nH

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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