GP1600FSS12
GP1600FSS12
Powerline N-Channel Single Switch IGBT Module
Advance Information
Replaces October 1999 version, DS5173-3.0
DS5173-4.0 January 2000
The GP1600FSS12 is a single switch 1200V, robust n
channel enhancement mode insulated gate bipolar
transistor (IGBT) module. Designed for low power loss, the
module is suitable for a variety of high voltage applications
in motor drives and power conversion. The high
impedance gate simplifies gate drive considerations
enabling operation directly from low power control
circuitry.
Fast switching times allow high frequency operation
making the device suitable for the latest drive designs
employing pwm and high frequency switching. The IGBT
has a wide reverse bias safe operating area (RBSOA) for
ultimate reliability in demanding applications.
These modules incorporate electrically isolated base
plates and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise earthed
heat sinks for safety.
The powerline range of high power modules includes
dual and single switch configurations with a range of
current and voltage capabilities to match customer system
demands.
Typical applications include dc motor drives, ac pwm
drives, main traction drives and auxiliaries, large ups
systems and resonant inverters.
V
CES
V
CE(sat)
I
C
I
C(PK)
KEY PARAMETERS
1200V
(typ)
2.7V
(max)
1600A
(max)
3200A
5
6
3
7
9
12
4
11
10
2
8
1
Outline type code: F
FEATURES
s
s
s
s
s
s
s
(See package details for further information)
Fig. 1 Electrical connections - (not to scale)
3/4(E)
n - Channel
Enhancement Mode
High Input Impedance
Optimised For High Power High Frequency Operation
Isolated Base
Full 1200V Capability
1600A Per Module
8(E
1
)
9(G
1
)
1/2(C)
7(C
1
)
Fig.2 Single switch circuit diagram
APPLICATIONS
s
s
s
s
ORDERING INFORMATION
Order As:
GP1600FSS12
Note: When ordering, please use the whole part number.
High Power Switching
Motor Control
Inverters
Traction Systems
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/11
DYNEX [ Dynex Semiconductor ]
