GP2400ESM18
GP2400ESM18
Hi-Reliability Single Switch IGBT Module
DS5406-1.1 January 2001
FEATURES
s
s
s
s
High Thermal Cycling Capability
Non Punch Through Silicon
Isolated MMC Base with AlN Substrates
2400A Per Module
KEY PARAMETERS
V
CES
(typ)
V
CE(sat)
(max)
I
C
(max)
I
C(PK)
1800V
3.5V
2400A
4800A
APPLICATIONS
s
s
s
s
External connection
C1
Aux C
C2
C3
High Reliability Inverters
Motor Controllers
Traction Drives
Resonant Converters
G
The powerline range of high power modules includes dual
and single switch configurations covering voltages from 600V to
3300V and currents up to 4800A.
The GP2400ESM18 is a single switch 1800V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications. This
device is optimised for traction drives and other applications
requiring high thermal cycling capability or very high reliability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
Aux E
E1
E2
External connection
E3
Fig. 1 Single switch circuit diagram
ORDERING INFORMATION
Order As:
GP2400ESM18
Note: When ordering, please use the whole part number.
Outline type code:
E
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/10
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