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GP250MHB06S 参数 Datasheet PDF下载

GP250MHB06S图片预览
型号: GP250MHB06S
PDF下载: 下载PDF文件 查看货源
内容描述: 半桥IGBT模块 [Half Bridge IGBT Module]
分类和应用: 双极性晶体管
文件页数/大小: 10 页 / 130 K
品牌: DYNEX [ Dynex Semiconductor ]
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GP250MHB06S
GP250MHB06S
Half Bridge IGBT Module
Replaces January 2000 version, DS4325 - 5.0
DS4325-6.0 October 2001
FEATURES
s
s
s
s
KEY PARAMETERS
V
CES
V
CE(sat)
I
C25
I
C75
I
C(PK)
(typ)
600V
2.2V
(max) 350A
(max) 250A
(max) 700A
n - Channel
High Switching Speed
Low Forward Voltage Drop
Isolated Base
APPLICATIONS
s
s
PWM Motor Contro
l
UPS
11(C
2
)
1(E
1
C
2
)
2(E
2
)
6(G
2
)
7(E
2
)
3(C
1
)
5(E
1
)
4(G
1
)
The Powerline range of modules includes half bridge,
chopper, dual and single switch configurations covering voltages
from 600V to 3300V and currents up to 2400A.
The GP250MHB06S is a half bridge 600V n channel
enhancement mode insulated gate bipolar transistor (IGBT)
module. The module is suitable for a variety of medium voltage
applications in motor drives and power conversion.
The IGBT has a wide reverse bias safe operating area
(RBSOA) for ultimate reliability in demanding applications.
These modules incorporate electrically isolated base plates
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
Typical applications include dc motor drives, ac pwm
drivesand ups systems.
9(C
1
)
Fig. 1 Half bridge circuit diagram
11
10
1
2
3
6
7
5
4
ORDERING INFORMATION
Order as:
GP250MHB06S
Note: When ordering, use complete part number.
8
9
Outline type code:
M
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/10
www.dynexsemi.com