GP401DDS18
GP401DDS18
Low V
CE(SAT)
Dual Switch IGBT Module
Preliminary Information
DS5272-3.0 January 2001
FEATURES
s
s
s
s
Low V
CE(SAT)
Non Punch Through Silicon
Isolated Copper Baseplate
Low Inductance Internal Construction
KEY PARAMETERS
V
CES
(typ)
V
CE(sat)
(max)
I
C
(max)
I
C(PK)
1800V
2.6V
400A
800A
APPLICATIONS
s
s
s
s
High Reliability Inverters
Motor Controllers
12(C
2
)
2(C
2
)
4(E
2
)
1(E
1
)
7(C
1
)
11(G
2
)
10(E
2
)
3(C
1
)
5(E
1
)
6(G
1
)
Traction Drives
Resonant Converters
The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 600V to
3300V and currents up to 4800A.
The GP401DDS18 is a dual switch 1800V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. Designed with low V
CE(SAT)
to minimise conduction
losses, the module is of particular relevance in low to medium
frequency applications. The IGBT has a wide reverse bias safe
operating area (RBSOA) ensuring reliability in demanding
applications.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
Fig. 1 Dual switch circuit diagram
5
6
3
7
8
1
ORDERING INFORMATION
Order As:
GP401DDS18
Note: When ordering, please use the whole part number.
9
12
11
10
4
2
Outline type code:
D
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/10
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