GP800DDM12
GP800DDM12
Hi-Reliability Dual Switch IGBT Module
Advance Information
Replaces May 2000 version, DS5291-1.3
DS5291-2.0 October 2000
FEATURES
s
s
s
s
High Thermal Cycling Capability
800A Per Switch
Non Punch Through Silicon
Isolated MMC Base with AlN Substrates
KEY PARAMETERS
V
CES
(typ)
V
CE(sat)
(max)
I
C
(max)
I
C(PK)
1200V
2.7V
800A
1600A
APPLICATIONS
s
s
s
s
High Reliability Inverters
Motor Controllers
Traction Drives
Resonant Converters
12(C
2
)
2(C
2
)
4(E
2
)
1(E
1
)
7(C
1
)
11(G
2
)
10(E
2
)
3(C
1
)
5(E
1
)
6(G
1
)
The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 1200V to
3300V and currents up to 4800A.
The GP800DDM12 is a dual switch 1200V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications. This
device is optimised for traction drives and other applications
requiring high thermal cycling capability or very high reliability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
Fig. 1 Dual switch circuit diagram
5
6
3
7
8
1
ORDERING INFORMATION
Order As:
GP800DDM12
Note: When ordering, please use the whole part number.
10
12
9
4
11
2
Outline type code:
D
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/11
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