GP800DDS18
ELECTRICAL CHARACTERISTICS
T
case
= 25˚C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
I
F
= 800A, V
R
= 50% V
CES
,
dI
F
/dt = 3500A/µs
Test Conditions
I
C
= 800A
V
GE
=
±15V
V
CE
= 900V
R
G(ON)
= R
G(OFF)
= 2.2Ω
L ~ 100nH
Min.
-
-
-
-
-
-
-
-
-
Typ.
1000
200
200
300
200
200
180
450
120
Max.
1200
300
300
400
300
300
240
-
-
Units
ns
ns
mJ
ns
ns
mJ
µC
A
mJ
T
case
= 125˚C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
I
F
= 800A, V
R
= 50% V
CES
,
dI
F
/dt = 3000A/µs
Test Conditions
I
C
= 800A
V
GE
=
±15V
V
CE
= 900V
R
G(ON)
= R
G(OFF)
= 2.2Ω
L ~ 100nH
Min.
-
-
-
-
-
-
-
-
-
Typ.
1200
250
300
400
250
350
300
525
190
Max.
1400
350
400
550
350
450
400
-
-
Units
ns
ns
mJ
ns
ns
mJ
µC
A
mJ
4/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DYNEX [ Dynex Semiconductor ]
