GP800DCS18
1600
1400
T
j
= 25˚C
1200
1000
T
j
= 125˚C
800
600
400
2000
1800
1600
Collector current, I
C
- (A)
Foward current, I
F
- (A)
1400
1200
1000
800
600
400
T
case
= 125˚C
V
ge
=
±15V
R
g(min)
= 2.2Ω
200
0
0
200
0.5
2.0
1.0
1.5
2.5
Foward voltage, V
F
- (V)
3.0
3.5
0
0
1200
400
800
1600
Collector-emitter voltage, V
ce
- (V)
2000
Fig.7 Diode typical forward characteristics
Fig.8 Reverse bias safe operating area
10000
100
Transient thermal impedance, Z
th (j-c)
- (°C/kW )
Diode
Transistor
I
C
max. (single pulse)
1000
Collector current, I
C
- (A)
50
µs
10
10
t
p
I
C
m
ax
0µ
s
s
1m
=
100
.D
C
(c
on
tin
uo
us
)
1
10
Conditions:
T
vj
= 125˚C, T
case
= 50˚C
1
1
10
100
1000
Collector-emitter voltage, V
ce
- (V)
10000
0.1
1
10
100
Pulse width, t
p
- (ms)
1000
10000
Fig.9 Forward bias safe operating area
Fig.10 Transient thermal impedance
6/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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