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GP800FSM18 参数 Datasheet PDF下载

GP800FSM18图片预览
型号: GP800FSM18
PDF下载: 下载PDF文件 查看货源
内容描述: 嗨,可靠性单开关IGBT模块 [Hi-Reliability Single Switch IGBT Module]
分类和应用: 开关双极性晶体管
文件页数/大小: 10 页 / 146 K
品牌: DYNEX [ Dynex Semiconductor ]
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GP800FSM18
GP800FSM18
Hi-Reliability Single Switch IGBT Module
DS5402-1.1 January 2001
FEATURES
s
s
s
s
High Thermal Cycling Capability
800A Per Module
Non Punch Through Silicon
Isolated MMC Base with AlN Substrates
KEY PARAMETERS
V
CES
(typ)
V
CE(sat)
(max)
I
C
(max)
I
C(PK)
1800V
3.5V
800A
1600A
APPLICATIONS
s
s
s
s
External connection
C1
Aux C
C2
High Reliability Inverters
Motor Controllers
Traction Drives
Resonant Converters
G
The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 600V to
3300V and currents up to 4800A.
The GP800FSM18 is a single switch 1800V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications. This
device is optimised for traction drives and other applications
requiring high thermal cycling capability or very high reliability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
Aux E
E1
E2
External connection
Fig. 1 Single switch circuit diagram
Aux C
Aux E
E1
C1
ORDERING INFORMATION
Order As:
GP800FSM18
Note: When ordering, please use the whole part number.
G
E2
C2
Outline type code:
F
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/10
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