GP801DCM18
GP801DCM18
Hi-Reliability Chopper Switch Low V
CE(SAT)
IGBT Module
DS5365-3.0 January 2001
FEATURES
s
s
s
s
s
Low V
CE(SAT)
800A Per Module
High Thermal Cycling Capability
Non Punch Through Silicon
Isolated MMC Base with AlN Substrates
KEY PARAMETERS
V
CES
(typ)
V
CE(sat)
(max)
I
C
(max)
I
C(PK)
1800V
2.6V
800A
1600A
APPLICATIONS
s
s
s
s
High Reliability
Motor Controllers
Traction Drives
Low Loss System Retrofit
2(C
2
)
4(E
2
)
1(E
1
)
3(C
1
)
5(E
1
)
6(G
1
)
7(C
1
)
The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 1200V to
3300V and currents up to 4800A.
The GP801DCM18 is an 1800V, n channel enhancement
mode, insulated gate bipolar transistor (IGBT) chopper module.
Designed with low V
CE(SAT)
to minimise conduction losses, the
module is of particular relevance in low to medium frequency
applications. The IGBT has a wide reverse bias safe operating
area (RBSOA) ensuring reliability in demanding applications.
This device is optimised for traction drives and other applications
requiring high thermal cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
Fig. 1 Dual switch circuit diagram
ORDERING INFORMATION
Order As:
GP801DCM18
Note: When ordering, please use the complete part number.
GPxxxDCxxx-xxx
Outline type code:
D
(See Package Details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/10
www.dynexsemi.com
DYNEX [ Dynex Semiconductor ]
