MA28155
DEFINITION OF SUBGROUPS
Subgroup
Definition
1
2
Static characteristics specified in Table 5 at +25°C
Static characteristics specified in Table 5 at +125°C
Static characteristics specified in Table 5 at -55°C
Functional characteristics specified at +25°C
3
7
8A
8B
9
Functional characteristics specified at +125°C
Functional characteristics specified at -55°C
Switching characteristics specified in Table 6 at +25°C
Switching characteristics specified in Table 6 at +125°C
Switching characteristics specified in Table 6 at -55°C
10
11
DC CHARACTERISTICS AND RATINGS
Note: Stresses above those listed may cause permanent
damage to the device. This is a stress rating only and
functional operation of the device at these conditions, or at
any other condition above those indicated in the operations
section of this specification, is not implied. Exposure to
absolute maximum rating conditions for extended periods
may affect device reliability.
Parameter
Min
-0.5
-0.3
-20
-55
-65
Max
7
Units
V
Supply Voltage
Input Voltage
VDD+0.3
+20
V
Current Through Any Pin
Operating Temperature
Storage Temperature
mA
°C
125
150
°C
Table 4: Absolute Maximum Ratings
Total dose radiation not
exceeding 3x105 Rad(SI)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
VDD
VIH
VIL
Supply Voltage
-
4.5
2.2
-
5.0
5.5
-
V
V
Input High Voltage
-
-
-
-
-
-
Input Low Voltage
-
0.8
-
V
VOH
VOL
IIN
Output High Voltage
Output Low Voltage
Input Leakage Current (Note 1)
IOH = -6mA
IOL = 12mA
3.5
-
V
0.5
±10
V
VDD = 5.5V,
-
µA
VIN = VSS or VDD
IOZ
IDD
Tristate Leakage Current (Note 1)
Power Supply Current
VDD = 5.5V,
VIN = VSS or VDD
-
-
-
±50
µA
Static,
0.1
10
mA
Note 1: Guaranteed but not tested at -55°C
Mil-Std-883, method 5005, subgroups 1, 2, 3.
VDD = 5V±10%, over full operating temperature range.
Table 5: Electrical Characteristics
15/20
DYNEX [ Dynex Semiconductor ]
