MA9264
MA9264
Radiation Hard 8192x8 Bit Static RAM
Replaces June 1999 version, DS3692-6.0
DS3692-7.0 January 2000
The MA9264 64k Static RAM is configured as 8192x8 bits and
manufactured using CMOS-SOS high performance, radiation hard,
1.5µm technology.
The design uses a 6 transistor cell and has full static operation with
no clock or timing strobe required. Address input buffers are deselected
when chip select is in the HIGH state.
See Application Note “Overview of the Dynex Semiconductor
Radiation Hard 1.5µm CMOS/SOS SRAM Range”.
Operation Mode
Read
Write
Output Disable
Standby
CS
L
L
L
H
X
CE
H
H
H
X
L
OE WE
L
X
H
X
X
H
L
H
X
X
I/O
D OUT
D IN
High Z
High Z
X
ISB2
ISB1
Power
FEATURES
s
1.5µm CMOS-SOS Technology
s
Latch-up Free
s
Fast Access Time 70ns Typical
s
Total Dose 10
6
Rad(Si)
s
Transient Upset >10
11
Rad(Si)/sec
s
SEU 4.3 x 10
-11
Errors/bitday
s
Single 5V Supply
s
Three State Output
s
Low Standby Current 100µA Typical
s
-55°C to +125°C Operation
s
All Inputs and Outputs Fully TTL or CMOS
Compatible
s
Fully Static Operation
Figure 1: Truth Table
A12
A9
A8
A4
A3
A6
A5
A7
A
D
D
R
E
S
S
B
U
F
F
E
R
R
O
W
D
E
C
O
D
E
R
CS
CE
WE
OE
A10
A0
A1
A2
A11
Figure 2: Block Diagram
1/15
DYNEX [ Dynex Semiconductor ]
