MF35
MF35
Fast Recovery Diode
Replaces March 1998 version, DS4625-3.1
DSDS4625-4.0 January 2000
APPLICATIONS
s
Inverse, Parallel Or Series Connected Diode
s
Power Supplies
s
High Frequency Applications
FEATURES
s
Glass Passivation
s
High Voltage Capability
s
Fast Recovery Characteristics
KEY PARAMETERS
V
RRM
1200V
I
F(AV)
40A
I
FSM
400A
Q
r
10
µ
C
t
rr
0.2ns
VOLTAGE RATINGS
Type Number
Repetitive Peak
Reverse Voltage
V
RRM
V
1200
1000
800
600
Conditions
MF35 - 1200
MF35 - 1000
MF35 - 800
MF35 - 600
V
RSM
= V
RRM
+100V
Lower voltage grades available.
For stud anode add suffix 'R' to type number. e.g. MF35-1200R.
Outline type code: DO5.
See Package Details for further information.
CURRENT RATINGS
Symbol
I
F(AV)
I
F(RMS)
I
F
Parameter
Mean forward current
RMS value
Continuous (direct) forward current
Conditions
Half sine wave resistive load, T
case
= 65
o
C
T
case
= 65
o
C
T
case
= 65
o
C
Max.
40
63
50
Units
A
A
A
1/8
DYNEX [ Dynex Semiconductor ]
