MP04TT1400
DYNAMIC CHARACTERISTICS
Symbol
I
RRM
/I
DRM
dV/dt
dI/dt
Parameter
Peak reverse and off-state current
Linear rate of rise of off-state voltage
Rate of rise of on-state current
Test Conditions
At V
RRM
/V
DRM
, T
j
= 125˚C
To 67% V
DRM
, T
j
= 125˚C
From 67% V
DRM
to 500A, gate source 10V, 5Ω
t
r
= 0.5µs, T
j
= 125˚C
V
T(TO)
r
T
Threshold voltage
On-state slope resistance
At T
vj
= 125˚C
At T
vj
= 125˚C
-
-
0.91
0.65
V
mΩ
Min.
-
-
-
Max.
50
1000
500
Units
mA
V/µs
A/µs
Note:
The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the
semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
V
GT
I
GT
V
GD
V
FGM
V
FGN
V
RGM
I
FGM
P
GM
P
G(AV)
Parameter
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Test Conditions
V
DRM
= 5V, T
case
= 25
o
C
V
DRM
= 5V, T
case
= 25
o
C
At V
DRM
T
case
= 125
o
C
Anode positive with respect to cathode
Anode negative with respect to cathode
-
Anode positive with respect to cathode
See table fig. 5
-
Max.
3.5
200
0.25
30
0.25
5
10
150
10
Units
V
mA
V
V
V
V
A
W
W
3/10
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