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RD43FF05 参数 Datasheet PDF下载

RD43FF05图片预览
型号: RD43FF05
PDF下载: 下载PDF文件 查看货源
内容描述: 整流二极管的目标信息 [Rectifier Diode Target Information]
分类和应用: 整流二极管
文件页数/大小: 7 页 / 99 K
品牌: DYNEX [ Dynex Semiconductor ]
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RD43FF
SURGE RATINGS
Symbol
I
FSM
I
2
t
I
FSM
I
2
t
Parameter
Surge (non-repetitive) forward current
I
2
t for fusing
Surge (non-repetitive) forward current
I
2
t for fusing
Test Conditions
10ms half sine, T
case
= 175˚C
V
R
= 50% V
RRM
- 1/4 sine
10ms half sine, T
case
= 175˚C
V
R
= 0
Max.
41.2
8.49 x 10
6
51.5
13.26 x 10
6
Units
kA
A
2
s
kA
A
2
s
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
Parameter
Thermal resistance - junction to case
Test Conditions
Double side cooled
Single side cooled
DC
Anode DC
Cathode DC
R
th(c-h)
Thermal resistance - case to heatsink
Clamping force 19.5kN
Double side
Min.
-
-
-
-
-
-
-
–55
17.6
Max.
0.022
0.038
0.052
0.004
0.008
225
200
200
21.6
Units
˚CW
˚CW
˚CW
˚CW
˚CW
˚C
˚C
˚C
kN
(with mounting compound) Single side
T
vj
Virtual junction temperature
Forward (conducting)
Reverse (blocking)
T
stg
F
m
Storage temperature range
Clamping force
CHARACTERISTICS
Symbol
I
RM
I
rr
Q
S
V
TO
r
T
Parameter
Peak reverse current
Peak reverse recovery current
Total stored charge
Threshold voltage
Slope resistance
Test Conditions
At V
RRM
, T
case
= 200˚C
I
F
= 2000A, dI
RR
/dt = 3A/µs,
T
case
= 200˚C, V
R
= 100V
At T
vj
= 200˚C
At T
vj
= 200˚C
Min.
-
-
-
-
-
Max.
50
25
150
0.6
0.0514
Units
mA
A
µC
V
mΩ
3/7
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