TA329..Q
TA329..Q
Asymmetric Thyristor
Advance Information
Replaces March 1998 version, DS4680-2.1
DS4680-3.0 January 2000
APPLICATIONS
s
High Frequency Applications
s
High Power Choppers And Inverters
s
Welding
s
Ultrasonic Generators
s
Induction Heating
s
400Hz UPS
s
PWM Inverters
KEY PARAMETERS
V
DRM
1400V
I
T(RMS)
370A
I
TSM
2000A
dVdt
1000V/
µ
s
dI/dt
1000A/
µ
s
t
q
7.0
µ
s
FEATURES
s
Low Loss Asymmetrical Diffusion Structure
s
High Interdigitated Amplifying Gate
s
Gate Assisted Turn-off With Exclusive Bypass Diode
s
Fully Characterised For Operation up to 40kHz
s
Directly Compatible With 220-480 A.c. Mains
VOLTAGE RATINGS
Type Number
Repetitive Peak
Off-state Voltage
V
DRM
V
1400
1200
1000
Repetitive Peak
Reverse Voltage
V
RRM
V
10
10
10
TA329 14 Q
TA329 12 Q
TA329 10 Q
Lower voltage grades available.
Outline type code: MU86.
See Package Details for further information.
CURRENT AND SURGE RATINGS
Symbol
Double Side Cooled
I
T(RMS)
I
TSM
I
2
t
RMS value
Surge (non-repetitive) on-state current
I
2
t for fusing
Half sine wave, duty cycle 50%, T
case
= 80
o
C,
T
j
= 125˚C.
T
j
= 125
o
C, t
p
= 1ms, V
R
= 0
t
p
≥
10ms
370
2000
20 x 10
3
A
A
A
2
s
Parameter
Conditions
Max.
Units
1/10
DYNEX [ Dynex Semiconductor ]
