TV18..F
SURGE RATINGS
Symbol
I
FSM
It
I
FSM
It
2
2
Parameter
Surge (non-repetitive) forward current
Conditions
Max.
3.5
Units
kA
A
2
s
kA
A
2
s
10ms half sine; with 0% V
RRM,
T
j
= 150 C
I t for fusing
Surge (non-repetitive) forward current
10ms half sine; with 50% V
RRM,
T
j
= 150 C
I t for fusing
2
o
2
o
61 x 10
3
2.8
39.2x 10
3
THERMAL AND MECHANICAL DATA
Symbol
R
th(j-c)
R
th(c-h)
T
vj
T
stg
-
Parameter
Thermal resistance - junction to case
Thermal resistance - case to heatsink
Virtual junction temperature
Storage temperature range
Mounting torque
Mounting torque 35.0Nm
with mounting compound
On-state (conducting)
Conditions
dc
Min.
-
-
-
-55
30.0
Max.
0.16
0.06
150
175
35.0
Units
o
C/W
o
C/W
o
C
C
o
Nm
CHARACTERISTICS
Symbol
V
FM
I
RRM
t
rr
Q
RA1
I
RM
K
V
TO
r
T
V
FRM
Forward voltage
Peak reverse current
Reverse recovery time
Recovered charge (50% chord)
Reverse recovery current
Soft factor
Threshold voltage
Slope resistance
Forward recovery voltage
At T
vj
= 150
o
C
At T
vj
= 150
o
C
di/dt = 1000A/µs, T
j
= 125
o
C
I
F
= 1000A, di
RR
/dt = 100A/µs
T
case
= 150
o
C, V
R
= 100V
Parameter
Conditions
At 1000A peak, T
case
= 25
o
C
At V
RRM
, T
case
= 150
o
C
Typ.
-
-
-
-
-
1.3
-
-
-
Max.
3.1
50
3.2
240
160
-
1.64
1.54
120
Units
V
mA
µs
µC
A
-
V
mΩ
V
2/8
DYNEX [ Dynex Semiconductor ]
