TV30
SURGE RATINGS
Symbol
I
FSM
I
2
t
I
FSM
I
2
t
Parameter
Surge (non-repetitive) forward current
I
2
t for fusing
Surge (non-repetitive) forward current
I
2
t for fusing
Conditions
10ms half sine; T
case
= 175
o
C
V
R
= 50% V
RRM
- 1/4 sine
10ms half sine; T
case
=175
o
C
V
R
= 0
Max.
4.8
115 x 10
6
6.0
180 x 10
3
Units
kA
A
2
s
kA
A
2
s
THERMAL AND MECHANICAL DATA
Symbol
R
th(j-c)
R
th(c-h)
Parameter
Thermal resistance - junction to case
Thermal resistance - case to heatsink
dc
Mounting torque 35.0Nm
with mounting compound
Forward (conducting)
T
vj
Virtual junction temperature
Reverse (blocking)
T
stg
-
Storage temperature range
Mounting Torque
-
-55
30.0
175
200
35.0
o
Conditions
Min.
-
-
-
Max.
0.13
0.06
175
Units
o
C/W
o
C/W
o
C
C
C
o
Nm
CHARACTERISTICS
Symbol
V
FM
I
RRM
Q
S
I
RM
t
rr
V
TO
r
T
Parameter
Forward voltage
Peak reverse current
Total stored charge
Peak recovery current
reverse recovery time
Threshold voltage
Slope resistance
At T
vj
= 175˚C
At T
vj
= 175˚C
I
F
= 200A, dI
RR
/dt = 20A/µs, T
case
= 25˚C
Conditions
At 1000A peak, T
case
= 25
o
C
At V
RRM
, T
case
= 175
o
C
Typ.
-
-
300*
90*
6.5*
-
-
Max.
1.4
20
-
-
-
0.8
0.6
Units
V
mA
µC
A
µs
V
mΩ
*Typical values.
2/7
DYNEX [ Dynex Semiconductor ]
