NVD NVDX ARRAYS
NIGHT VISION
H.V. RECTIFIER DIODES & ARRAYS
These diodes and arrays have been specifically designed for use in night vision and image
intensifier equipment power supplies. They offer unusual characteristics that have not been
previously available. As a result of a proprietary EDI diffusion process, they feature small size
and a unique combination of extremely low leakage and ultra fast recovery time.
Diode Specifications @ 23 C
(Absolute Maximum Unless
Otherwise Specified)
PRV
IF
VF @ 1 mA d c
Junction Capacitance
I R @ 1,000 Vdc @ 23 C
I R @ 1,000 Vdc @ 55 C
I R @ 500 Vdc
I R @ 500 Vdc @ 55 C
I R @ 250 Vdc @ 23 C
I R @ 250 Vdc @ 55 C
Trr (
Reverse Recovery Time
),Fig.4
Temperature Range: Operating
Temperature Range: Storage
O
O
O
O
O
o
NVDX Diode
(Standard Recovery)
1,000 Vdc
5.0mA
6.0 V
NVD Diode
And Diode Arrays
(Fast Recovery)
1,200 Vdc
5.0mA
4.0 V
0.35pF . @500 Vdc
0.5 nanoamperes
5.0 nanoamperes
1.0 nanoamperes typical
5.0 nanoamperes max.
25 nanoamperes
0.1 nanoamperes typical
0.25 nanoamperes max.
1.0 nanoamperes typical
2.0 nanoamperes max.
50 ns typical
100 ns max.
-55 C to +100 C
-63 C to +125 C
o
o
o
o
-55 C to +100 C
-63 C to +125 C
o
o
o
o
EDI reserves the right to change these specifications at any time without notice.
EDI [ ELECTRONIC DEVICES INC. ]
