1N4728 - 1N4764
Z1110 - Z1200
V
Z
: 3.3 - 200 Volts
P
D
: 1 Watt
FEATURES :
* Complete voltage range 3.3 to 200 Volts
* High peak reverse power dissipation
* High reliability
* Low leakage current
SILICON ZENER DIODES
DO - 41
0.107 (2.7)
0.080 (2.0)
1.00 (25.4)
MIN.
0.205 (5.2)
0.166 (4.2)
MECHANICAL DATA
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.339 gram
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS
Rating at 25
°
C ambient temperature unless otherw ise specified
Rating
DC Power Dissipation at T
L
= 50
°
C (Note1)
Maximum Forward Voltage at I
F
= 200 mA
Maximum Thermal Resistance Junction to Ambient Air (Note2)
Junction Temperature Range
Storage Temperature Range
Symbol
P
D
V
F
R
θ
JA
T
J
Ts
Value
1.0
1.2
170
- 55 to + 175
- 55 to + 175
Unit
Watt
Volts
K/W
°
C
°
C
Note :
(1) T
L
= Lead temperature at 3/8 " (9.5mm) from body
(2) Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case.
Fig. 1 POWER TEMPERATURE DERATING CURVE
1.25
L = 3/8" (9.5mm)
P
D
, MAXIMUM DISSIPATION
(WATTS)
1.00
0.75
0.50
0.25
0
25
50
75
100
125
T
L,
LEAD TEMPERATURE (
°
C)
150
175
UPDATE : SEPTEMBER 9, 2000
EIC [ EIC DISCRETE SEMICONDUCTORS ]
