Certificate TH97/10561QM
Certificate TW00/17276EM
1N5415 - 1N5420
PRV : 50 - 600 Volts
Io : 3.0 Amperes
FEATURES :
*
*
*
*
*
*
*
Glass Passivated Junction Chip
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Fast recovery time
Pb / RoHS Free
FAST RECOVERY RECTIFIERS
D2A
0.161 (4.1)
0.154 (3.9)
1.00 (25.4)
MIN.
0.284 (7.2)
0.268 (6.8)
0.040 (1.02)
0.0385 (0.98)
1.00 (25.4)
MIN.
MECHANICAL DATA :
* Case : D2A Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.645 gram
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specified.
RATING
Maximum Working Peak Reverse Voltage
Minimum Breakdown Voltage @ 50µA
Maximum Average Forward Current at Ta = 55 °C
Maximum Forward Surge Current 8.3ms Single
half sine wave Superimposed on rated load
Maximun Forward Voltage
at I
F
= 3.0 A
at I
F
= 9.0 A
Maximum Reverse Current at V
RWM
Ta = 25 °C
Ta = 100 °C
Maximum Reverse Recovery Time
(1)
Thermal Resistance, Junction to Lead
Junction Temperature Range
Storage Temperature Range
(2)
SYMBOL
1N5415 1N5416 1N5417 1N5418 1N5419 1N5420
UNIT
V
RWM
V
BR(Min)
I
F(AV)
I
FSM
V
F
I
R
I
R(H)
Trr
R
ӨJL
T
J
T
STG
150
20
- 65 to + 175
- 65 to + 175
50
55
100
110
200
220
3.0
80
1.10
1.50
1.0
20
250
400
400
440
500
550
600
660
V
V
A
A
V
μA
ns
°C/W
°C
°C
Notes :
(1) Reverse Recovery Test Conditions : I
F
= 0.5A, I
RM
= 1A, I
R(REC)
= 0.25 A .
(2) At 3/8 inch (10 mm) lead length from body.
Page 1 of 2
Rev. 00 : September 17, 2007
EIC [ EIC DISCRETE SEMICONDUCTORS ]
