2W005 - 2W10
PRV : 50 - 1000 Volts
Io : 2.0 Amperes
FEATURES :
*
*
*
*
*
*
*
High case dielectric strength
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Ideal for printed circuit board
Pb / RoHS Free
SILICON BRIDGE RECTIFIERS
WOB
0.39 (10.0)
0.31 (7.87)
0.22 (5.59)
0.18 (4.57)
+
AC
-
1.00 (25.4)
MIN.
1.10 (27.9)
MIN.
0.034 (0.86)
0.028 (0.71)
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated leads solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 1.29 grams
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
AC
+
-
AC
0.22 (5.59)
0.18 (4.57)
0.22 (5.59)
0.18 (4.57)
Dimension in inches and (millimeter)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375" (9.5 mm) lead length
Single half sine wave
Rating for fusing
( t < 8.3 ms. )
Ta = 25
°C
Ta = 100
°C
Maximum Forward Voltage per Diode at I
F
= 1.0 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Thermal Resistance (Note 2)
Operating Junction Temperature Range
Storage Temperature Range
Tc = 25°C
Maximum Peak Forward Surge Current
SYMBOL 2W005 2W01 2W02 2W04 2W06 2W08 2W10 UNIT
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
It
V
F
I
R
I
R(H)
C
J
R
θ
JA
T
J
T
STG
2
50
35
50
100
70
100
200
140
200
400
280
400
2.0
50
10
1.0
10
1.0
24
36
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
AS
V
µA
mA
pf
°C/W
°C
°C
2
Typical Junction Capacitance per Diode (Note 1)
- 50 to + 150
- 50 to + 150
Notes :
1 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.
2 ) Thermal resistance from Junction to Ambient at 0.375" (9.5 mm) lead length P.C. Board with, 0.22" x 0.22" (5.5 x 5.5 mm) copper Pads.
Page 1 of 2
Rev. 02 : March 25, 2005
EIC [ EIC DISCRETE SEMICONDUCTORS ]
