BAV19WS ~ BAV21WS
PRV : 100 Volts
Io : 250 mA
FEATURES :
* Silicon Epitaxial Planar Diode
* For General Purpose
* Pb / RoHS Free
SMALL SIGNAL DIODES
SOD-323
0.012 (0.3)
0.076 (1.95)
0.065 (1.65)
0.112 (2.85)
MECHANICAL DATA :
* Case : SOD-323 plastic Case
min. 0.010 (0.25)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specified.
Parameter
Reverse Voltage
Peak Reverse Voltage
Rectified Current (Average)
Half Wave Rectification with Resist. Load
at T
amb
= 25
°C
and f
≥
50 Hz
Surge Forward Current at t < 1 s and Tj = 25
°C
Power Dissipation at T
amb
= 25
°C
Junction Temperature
Storage Temperature Range
Symbol
V
R
V
RM
BAV19WS
100
120
BAV20WS
150
200
BAV21WS
200
250
max. 0.006 (0.15)
0.059 (1.5)
0.043 (1.1)
max. 0.004(0.1)
0.049 (1.25)
max.
0.100 (2.55)
Unit
V
V
I
F(AV)
250
mA
I
FSM
P
tot
Tj
T
S
1.0
200
1)
A
mW
°C
°C
150
-65 to + 175
ELECTRICAL CHARACTERISTICS
(Rating at Tj =
Parameter
Forward Voltage
Leakage Current
BAV19WS
BAV20WS
BAV21WS
Capacitance
Reverse Recovery Time
I
R
25
°C
unless otherwise specified)
Symbol
V
F
Test Condition
I
F
= 100 mA
I
F
= 200 mA
V
R
= 100 V
V
R
= 150 V
V
R
= 200 V
V
F
= V
R
= 0 V
I
F
= 30 mA, I
R
= 30mA
Irr = 3 mA, R
L
= 100Ω
Min.
-
-
-
-
-
-
-
Typ. Max.
-
-
-
-
-
-
-
1
1.25
100
100
100
1.5
50
Unit
V
V
nA
pF
ns
C
tot
Trr
Note : 1) Valid provided that electrodes are kept at ambient temperature
Page 1 of 2
Rev. 03 : March 25, 2005
EIC [ EIC DISCRETE SEMICONDUCTORS ]
