BR1000 - BR1010
PRV : 50 - 1000 Volts
Io : 10 Amperes
FEATURES :
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Ideal for printed circuit board
SILICON BRIDGE RECTIFIERS
BR10
0.520 (13.20)
0.480 (12.20)
0.158 (4.00)
0.142 (3.60)
AC
0.77 (19.56)
0.73 (18.54)
0.290 (7.36)
0.210 (5.33)
AC
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per
MIL - STD 202 , Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 6.1 grams
0.052 (1.32)
0.048 (1.22)
0.75 (19.1)
Min.
0.30 (7.62)
0.25 (6.35)
Dimensions in inches and ( millimeters )
Rating at 25
°
C ambient temperature unless otherw ise specified.
Single phase, half w ave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forw ard Current Tc=55
°
C
Peak Forw ard Surge Current Single half sine w ave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forw ard Voltage per Diode at I
F
= 5 Amp.
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Ta = 25
°
C
Ta = 100
°
C
SYMBOL BR1000 BR1001 BR1002 BR1004 BR1006 BR1008 BR1010
UNITS
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
100
70
100
200
140
200
400
280
400
10
600
420
600
800
560
800
1000
700
1000
Volts
Volts
Volts
Amp.
I
FSM
I
2
t
V
F
I
R
I
R(H)
R
θ
JC
T
J
T
STG
300
160
1.0
10
200
2.5
- 40 to + 150
- 40 to + 150
Amp.
A
2
S
Volts
µ
A
µ
A
°
C/W
°
C
°
C
Notes :
1. Thermal Resistance from junction to case w ith units mounted on a 3.2" x 3.2" x 0.12" (8.2cm.x 8.2cm.x 0.3cm.) Al.-Finned Plate.
UPDATE : APRIL 23, 1998
EIC [ EIC DISCRETE SEMICONDUCTORS ]
