欢迎访问ic37.com |
会员登录 免费注册
发布采购

BYD37J 参数 Datasheet PDF下载

BYD37J图片预览
型号: BYD37J
PDF下载: 下载PDF文件 查看货源
内容描述: 雪崩快速软恢复整流二极管 [AVALANCHE FAST SOFT-RECOVERY RECTIFIER DIODES]
分类和应用: 整流二极管局域网软恢复二极管快速软恢复二极管
文件页数/大小: 2 页 / 113 K
品牌: EIC [ EIC DISCRETE SEMICONDUCTORS ]
 浏览型号BYD37J的Datasheet PDF文件第2页  
Certificate TH97/10561QM
Certificate TW00/17276EM
BYD37D - BYD37M
PRV : 200 - 1000 Volts
Io : 1.5 Amperes
FEATURES :
*
*
*
*
*
Glass passivated
High maximum operating temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
* Smallest surface mount rectifier outline
* Pb / RoHS Free
AVALANCHE FAST SOFT-RECOVERY
RECTIFIER DIODES
MELF (Plastic)
Cathode Mark
φ
0.102 (2.6)
0.094 (2.4)
0.022(0.55)
0.205(5.2)
0.189(4.8)
MECHANICAL DATA :
* Case : Molded plastic
* Terminals : Plated Terminals, solderable per
MIL-STD-750 Method 2026
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.116 gram
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum Continuous Reverse Voltage
Min. Reverse Avalanche Breakdown Voltage @ IR = 0.1 mA
Maximum Average Forward Current Ttp = 105 °C (Note 1)
Maximum Non-Repetitive Peak Forward Surge Current (Note 2)
Maximum Repetitive Peak Forward Current
Maximum Forward Voltage at 1.0 A
Maximum Reverse Current at V
R
=V
RRMmax
Maximum Reverse Recovery Time (Note 3)
Thermal Resistance from Junction to Tie-Point
Thermal Resistance from Junction to Ambient (Note 4)
Junction Temperature Range
Storage Temperature Range
T
J
= 20 °C
T
J
= 165 °C
SYMBOL
V
RRM
V
R
V
(BR)R-min
I
F(AV)
I
FSM
I
FRM
V
F
I
R
I
R(H)
Trr
R
th j-tp
R
th j-a
T
J
T
STG
BYD
37D
200
200
300
BYD
37G
400
400
500
BYD
37J
600
600
700
1.5
20
12
1.3
1.0
100
BYD
37K
800
800
900
BYD
37M
1000
1000
1100
UNIT
V
V
V
A
A
A
V
μA
μA
250
30
120
- 65 to + 175
- 65 to + 175
300
ns
K/W
K/W
°C
°C
Notes :
(1) Averaged over any 20 ms period.
(2) t=10ms half sine wave; Tj = Tjmax prior to surge; V = V
RRMmax
R
(3) Reverse Recovery Test Conditions
: I
F
= 0.5 A, I
R
= 1.0 A, Irr = 0.25 A.
(4) Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-lay≤ 40
μm.
Page 1 of 2
Rev. 02 : March 9, 2006