RATING AND CHARACTERISTIC CURVES ( BYV95A - BYV96E )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
Ω
10
Ω
+0.5A
D.U.T
+
-
50 Vdc
(approx.)
1
Ω
OSCILLOSCOPE
(NOTE1)
PULSE
GENERATOR
(NOTE2)
0
- 0.25
Trr
- 1.0A
1cm
SET TIME BASE FOR 50/100 ns/cm
NOTE :
1. Rise Time = 7ns max.,Input Impedance = 1 megaohm, 22pF.
2. Rise Time = 10ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
FIG.2 - FORWARD CURRENT DERATING CURVE
PEAK FORWARD SURGE CURRENT,
AMPERES
0
25
50
75
100
125
150
175
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
50
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
1.5
1.2
40
0.9
30
0.6
20
0.3
10
0
0
1
2
4
6
10
20
40
60
100
TIE-POINT TEMPERATURE, (
°
C)
NUMBER OF CYCLES AT 50Hz
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
10
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
REVERSE CURRENT, MICROAMPERES
10
TJ = 125
°C
FORWARD CURRENT, AMPERES
TJ = 100
°C
1.0
TJ = 25
°C
1.0
0.1
Pulse Width = 300
µs
2% Duty Cycle
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.1
TJ = 25
°C
0.01
0
20
40
60
80
100
120
140
FORWARD VOLTAGE, VOLTS
PERCENT OF RATED REVERSE
VOLTAGE, (%)
EIC [ EIC DISCRETE SEMICONDUCTORS ]
