TH97/10561QM
TW00/17276EM
IATF 0060636
SGS TH07/1033
RATING AND CHARACTERISTIC CURVES ( BZG03-C10 ~ BZG03-C200 )
FIG.1 - Maximum total power dissipation as a
function of temperature.
FIG.2 - Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (square pulse).
P
tot
(W)
4
P
ZSM
(W)
10
4
3
10
3
2
10
2
1
0
0
100
10
T, (°C)
175
10
-2
10
-1
1
tp (ms)
10
Solid line: tie-point temperature.
Dotted line: ambient temperature; device mounted
on an Al
2
O
3
PCB as shown in Fig.5.
Tj= 25 °C prior to surge.
FIG. 3 - Forward current as a function of forward
voltage; typical values.
3
I
F
(A)
FIG.4 - Printed-circuit board for surface mounting.
50
4.5
2
50
□
2.5
1
1.25
0
0
1
V
F
(V)
2
Dimensions in mm.
Tj= 25 °C.
Page 3 of 3
Rev. 08 : September 18, 2008
EIC [ EIC DISCRETE SEMICONDUCTORS ]
