BZX55C2V4 ~ BZX55C200
V
Z
: 2.4 - 200 Volts
P
D
: 500 mW
SILICON ZENER DIODES
DO - 35
1.00 (25.4)
min.
0.079(2.0 )max.
FEATURES :
*
*
*
*
*
Complete 2.4 to 200 Volts
High surge current capability
High peak reverse power dissipation
High reliability
Low leakage current
0.150 (3.8)
max.
0.020 (0.52)max.
1.00 (25.4)
min.
Dimensions in inches and ( millimeters )
MECHANICAL DATA
* Case : Molded glass
* Lead : Axial lead solderable per MIL-STD-202,
method 208 guaranteed
* Polarity : Color band denotes cathode end. When operated in zener mode,
cathode will be positive with respect to anode
* Mounting position : Any
* Weight : 0.13 gram
MAXIMUM RATINGS
Rating at 25
°
C ambient temperature unless otherwise specified
Rating
Power Dissipation (Note)
Maximum Forward Voltage at I
F
=100 mA
Maximum Thermal Resistance Junction to Ambient Air (Note1)
Junction Temperature Range
Storage Temperature Range
Symbol
P
D
V
F
R
θ
JA
T
j
T
s
Value
500
1.0
0.3
- 55 to + 175
- 55 to + 175
Unit
mW
V
K / mW
°
C
°
C
Note
: 1. Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case.
UPDATE : JANUARY 18, 2002
EIC [ EIC DISCRETE SEMICONDUCTORS ]
