RATING AND CHARACTERISTIC CURVES ( FES16AT ~ FES16JT )
FIG.1 - FORWARD CURRENT
DERATING CURRENT
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
24
300
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
T
J
=TJ max.
8.3ms SINGLE HALF SINE-WAVE
(JEDEC) Method
PEAK FORWARD SURGE
CURRENT, AMPERES
0
25
50
75
100
125
150
175
20
250
16
20
12
150
8
100
4
50
0
0
1
2
4
6
10
20
40
60
100
CASE TEMPERATURE, (
°
C)
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
100
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
100
FES16AT - FES16DT
FES16FT - FES16GT
INSTANTANEOUS FORWARD
CURRENT, AMPERES
INSTANTANEOUS REVERSE
CURRENT, MICROAMPERES
T
J
= 100
°C
10
10
FES16HT - FES16JT
1
T
J
= 25
°C
Pulse Width = 300
µs
1% Duty Cycle
1
T
J
= 25
°C
0.1
0
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
20
40
60
80
100
120
140
INSTANTANEOUS FORWARD
VOLTAGE, VOLTS
PERCENT OF RATED PEAK REVERSE
VOLTAGE, (%)
FIG. 5 – TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, pF
1000
TJ = 25°C
f = 1.0 MHz
Vsig = 50 mVp-p
FES16AT - FES16GT
100
FES16HT - FES16JT
0
0.1
1
10
100
REVERSE VOLTAGE, VOLTS
Page 2 of 2
Rev. 02 : March 31, 2005
EIC [ EIC DISCRETE SEMICONDUCTORS ]
