FES16AT - FES16JT
PRV : 50 - 600 Volts
Io : 16 Ampere
FEATURES :
* High current capability
* High surge current capability
* Low leakage, high voltage
* Glass passivated chip junction
* Pb / RoHS Free
Ultrafast Plastic Rectifiers
TO-220AC
0.154(3.91)DIA.
0.148(3.74)
0.113(2.87)
0.103(2.62)
0.415(10.54)MAX.
0.055(1.39)
0.045(1.14)
0.145(3.68)
0.135(3.43)
0.350(8.89)
0.330(8.39)
1
PIN 1
2
0.160(4.06)
0.140(3.56)
0.560(14.22)
0.530(13.46)
0.185(4.70)
0.175(4.44)
0.635(16.13)
0.625(15.87)
0.603(15.32)
0.573(14.55)
MECHANICAL DATA :
* Case : Epoxy, Molded
* Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
* Polarity: As marked
* Mounting Position: Any
* Weight : 2.24 grams (Approximately)
PIN 2
CASE
0.205(520)
0.195(4.95)
0.037(0.94)
0.027(0.68)
0.022(0.56)
0.014(0.36)
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specified.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current, Tc = 100°C
Maximum Peak Forward Surge Current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method) at Tc = 100°C
Maximum Instantaneous Forward Voltage at I
F
= 16 A
Maximum Reverse Current at
Rated DC Blocking Voltage
Tc = 25
°C
Tc = 100
°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
FES FES FES FES FES FES FES FES
16AT 16BT 16CT 16DT 16FT 16GT 16HT 16JT
50
35
50
100
70
100
150
105
150
200
140
200
16
250
300
210
300
400
280
400
500
350
500
600
420
600
UNIT
V
V
V
A
A
V
F
I
R
I
R(H)
Trr
Cj
RθJC
T
J
, T
STG
0.975
10
500
35
175
1.2
1.3
1.5
V
µA
µA
Maximum Reverse Recovery Time ( Note 1 )
Typical junction capacitance at 4V, 1MHz
Maximum Thermal Resistance, Junction to Case
Operating storage and temperature range
Note :
50
145
ns
pF
°C/W
°C
- 65 to + 150
(1) Reverse Recovery Test Conditions : I
F
= 0.5A, I
R
= 1A ; Irr = 0.25 A
Page 1 of 2
Rev. 02 : March 31, 2005
EIC [ EIC DISCRETE SEMICONDUCTORS ]
