LL103A - LL103C
FEATURES :
• For general purpose applications
• The LL103A, B, C series is a metal-on-silicon
Schottky barrier device which is protected by a
PN junction guard ring.
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing and coupling diodes for fast
switching and low logic level applications.
• Other applications are click suppression, efficient
full wave bridges in telephone subsets, and
blocking diodes in rechargeable low voltage
battery systems.
• These diodes are also available in the DO-35 case with
type designation SD103A, B, C
• Pb / RoHS Free
SCHOTTKY BARRIER DIODES
MiniMELF (SOD-80C)
Cathode Mark
φ
0.063 (1.64)
0.055 (1.40)
0.019(0.48)
0.011(0.28)
0.142(3.6)
0.134(3.4)
Mounting Pad Layout
0.098 (2.50)
Max.
0.049 (1.25)Min.
0.079 (2.00)Min.
MECHANICAL DATA :
Case:
MiniMELF Glass Case (SOD-80C)
Weight:
approx. 0.05g
0.197 (5.00)
REF
Dimensions in inches and ( millimeters )
25
°
C ambient temperature unless otherwise specified.)
Maximum Ratings and Thermal Characteristics
(Rating at
Parameter
LL103A
Repetitive Peak Reverse Voltage
LL103B
Symbol
V
RRM
Value
40
30
20
Unit
V
LL103C
Single Cycle Surge 60 Hz Sine Wave
Power Dissipation (Infinite Heatsink)
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage temperature range
Note: (1) Valid provided that electrodes are kept at ambient temperature.
I
FSM
P
D
R
θ
JA
T
J
T
S
15
400
(1)
A
mW
°C/W
°C
°C
300
(1)
125
-55 to + 150
Electrical Characteristics
(T
J
= 25°C unless otherwise noted)
Parameter
Reverse Current
LL103A
LL103B
LL103C
Symbol
I
R
Test Condition
V
R
= 30 V
V
R
= 20 V
V
R
= 10 V
I
F
= 20mA
I
F
= 200mA
V
R
= 0 V, f = 1MHz
I
F
= I
R
= 5mA to 200mA
recover to 0.1I
R
Min
-
-
-
-
-
-
-
Typ
-
-
-
-
-
50
10
Max
5
5
5
0.37
0.6
-
-
Unit
µA
Forward Voltage Drop
Diode Capacitance
Reverse Recovery Time
V
F
Cd
Trr
V
pF
ns
Page 1 of 2
Rev. 02 : March 24, 2005
EIC [ EIC DISCRETE SEMICONDUCTORS ]
