MURF1620CT
PRV : 200 Volts
Io : 16 Ampere
FEATURES :
* Ideally suited for free wheeling diode power factor
correction applications
* Soft recovery characteristics
* Excellent high temperature switching
* Glass passivated chip junction
* Pb / RoHS Free
Dual Ultrafast Plastic Rectifiers
ITO-220AB
0.134(3.4)DIA.
0.113(3.0)DIA.
0.112(2.85)
0.100(2.55)
0.406(10.3)MAX.
0.185(4.70)Max.
0.124(3.16)Max.
0.272(6.9)
0.248(6.3)
0.603(15.5)
0.573(14.8)
1
0.543(13.8)
0.512(13.2)
2 3
0.161(4.1)Max.
0.055(1.4)Max.
0.110(2.8)
0.098(2.5)
0.035(0.9)Max.
MECHANICAL DATA :
* Case : Epoxy, Molded
* Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
* Polarity: As marked
* Mounting Position: Any
* Weight : 2.24 grams (Approximately)
0.030(0.76)Max.
0.100(2.55)
PIN 1
PIN 2
PIN 3
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Tc =25°C unless otherwise specified.)
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current, Tc = 100°C
Maximum Non−repetitive Peak Surge Current
(Surge applied at rated load conditions halfwave,
single phase, 60 Hz)
Maximum Instantaneous Forward Voltage per Leg
at I
F
= 8 A, Tc = 25°C
I
F
= 8 A, Tc = 150°C
Maximum Instantaneous Reverse Current
(Rated dc Voltage)
Maximum Reverse Recovery Time
(I
F
= 0.5A, I
R
= 1.0A, Irr = 0.25A )
Maximum Thermal Resistance, Junction to Case
Operating storage and temperature range
Page 1 of 2
I
R
I
R(H)
Trr
RθJC
T
J
, T
STG
V
F
0.975
0.895
5.0 (Tc = 25°C)
250 (Tc = 100°C)
25
4.2
- 65 to + 150
µA
µA
ns
°C/W
°C
Rev. 02 : March 25, 2005
V
I
FSM
100
A
SYMBOL
V
RRM
V
RWM
V
DC
I
F(AV)
VALUE
200
200
200
8.0
16 (Total Device)
UNIT
V
V
V
A
EIC [ EIC DISCRETE SEMICONDUCTORS ]
